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STD30NF06L N-CHANNEL 60V - 0.022 - 35A DPAK/IPAK STripFETTM POWER MOSFET TYPE STD30NF06L s s s s VDSS 60 V RDS(on) <0.028 ID 35 A s s TYPICAL RDS(on) = 0.022 EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL ADD SUFFIX "-1" FOR ORDERING IN IPAK CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONS 3 2 1 3 1 IPAK DPAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj July 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 60 60 20 35 25 140 70 0.46 25 - 55 to 175 (1) ISD 38A, di/dt 400A/s, V DD V(BR)DSS , Tj TJMAX. Unit V V V A A A W W/C V/ns C (q) Pulse width limited by safe operating area 1/10 STD30NF06L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.14 100 275 C/W C/W C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 35 150 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20 V Min. 60 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 A VGS = 5 V, ID = 18 A VGS = 10 V, ID = 18 A Min. 1 Typ. 1.7 0.025 0.022 Max. 2.5 0.03 0.028 Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > =15 V , ID =15 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 25 1600 215 60 Max. Unit S pF pF pF 2/10 STD30NF06L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30 V, ID = 18 A RG = 4.7 VGS = 4.5 V (see test circuit, Figure 3) VDD = 48 V, ID = 38 A, VGS = 5 V Min. Typ. 30 105 23 7 10 31 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 30 V, ID = 18 A, RG = 4.7, VGS = 4.5 V (see test circuit, Figure 3) Min. Typ. 65 25 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 35 A, VGS = 0 ISD = 38 A, di/dt = 100 A/s, VDD = 15 V, Tj = 150C (see test circuit, Figure 5) 70 140 4 Test Conditions Min. Typ. Max. 35 140 1.5 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Normalized Thermal Impedence 3/10 STD30NF06L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STD30NF06L Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Normalized Drain-Source Breakdown vs Temperature Source-drain Diode Forward Characteristics 5/10 STD30NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD30NF06L TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H A C C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 7/10 STD30NF06L TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 8/10 STD30NF06L DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 1.85 7.6 2.75 4.1 8.1 2.1 16.3 BASE QTY 2500 mm MIN. 6.8 10.4 MAX. 7 10.6 12.1 1.6 inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 9/10 STD30NF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 10/10 |
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